But when downscaling logic device technology towards the 5-nm and 3-nm technology nodes, meeting resistance and reliability requirements for the tightly pitched Cu lines has become increasingly challenging. After careful evaluation of the resistance and reliability behavior, imec is taking the first steps towards extending conventional metallization into to the 3-nm technology node.įor almost two decades, Cu-based dual damascene has been the workhorse industrial process flow for building reliable interconnects. At this week’s 2018 IEEE International Interconnect Technology Conference ( IITC 2018), imec is presenting 11 papers on advanced interconnects, ranging from extending Cu and Co damascene metallization all the way to evaluating new alternatives such as Ru and graphene.
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